| PART |
Description |
Maker |
| NESG210719-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| NESG204619-T1-A NESG204619 NESG204619-A |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
CEL[California Eastern Labs]
|
| NESG4030M14 NESG4030M14-A NESG4030M14-T3 NESG4030M |
NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
|
NEC
|
| 2SC5761 2SC5761-T2 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
|
NEC[NEC]
|
| BFP640 |
Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA
|
Infineon
|
| NESG3031M05-T1-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
|
California Eastern Labs
|
| HMC482ST89E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 5.0 GHz
|
Hittite Microwave Corporation
|
| HMC479MP86 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC476SC7010 476SC70E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz
|
Hittite Microwave Corporation
|
| HMC479ST89 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC478SC70 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4 GHz
|
Hittite Microwave Corporation
|
